POLARON AND BIPOLARON-LIKE STATES IN N-DOPED BITHIOPHENE

Citation
D. Steinmuller et al., POLARON AND BIPOLARON-LIKE STATES IN N-DOPED BITHIOPHENE, Physical review. B, Condensed matter, 47(20), 1993, pp. 13323-13329
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
47
Issue
20
Year of publication
1993
Pages
13323 - 13329
Database
ISI
SICI code
0163-1829(1993)47:20<13323:PABSIN>2.0.ZU;2-R
Abstract
Bithiophene is studied with varying Cs dosing as a model for the n-dop ing of thiophene-based conducting polymers. The evolution of the elect ronic structure with increasing Cs concentration is followed both indi rectly, by electron-energy-loss spectroscopy (EELS), and directly by u ltraviolet-photoemission spectroscopy (UPS). In both spectroscopies th e behavior of the states formed in the gap indicates two doping regime s. The EELS results parallel the optical-absorption results for the p- doping of longer thiophene oligomers and polythiophene, and suggest a polaron (anion) to bipolaronlike (dianion) transformation. The UPS res ults are consistent with this interpretation, showing first in the low -doping regime the appearance of two states in the band gap which move closer together in the higher-doping regime. This constitutes direct observation of a transition from polaron to bipolaron states, albeit i n a model system. Consideration of the photoionization cross sections indicates that the deeper (bi)polaron level has C 2p character while t he shallow level, filled by donation from the Cs, has significant S 3p character.