HELIUM-FILM-INDUCED RETRAPPING TRANSITION IN THE 2-DIMENSIONAL ELECTRON-SYSTEM ABOVE AN UNEVEN SOLID-HYDROGEN SURFACE

Citation
Yp. Monarkha et al., HELIUM-FILM-INDUCED RETRAPPING TRANSITION IN THE 2-DIMENSIONAL ELECTRON-SYSTEM ABOVE AN UNEVEN SOLID-HYDROGEN SURFACE, Physical review. B, Condensed matter, 47(20), 1993, pp. 13812-13817
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
47
Issue
20
Year of publication
1993
Pages
13812 - 13817
Database
ISI
SICI code
0163-1829(1993)47:20<13812:HRTIT2>2.0.ZU;2-A
Abstract
A detailed theoretical analysis of the conductivity of surface electro ns above a thin liquid-helium film covering an uneven solid-hydrogen s urface is presented. The pronounced conductivity anomaly which is obse rved during the growth of the helium film is shown to originate from a strong coupling of the electrons to the roughness of the underlying h ydrogen substrate. The observed conductivity anomalies (dip and peak) can be explained quantitatively by a retrapping structural transition within the disordered system of localized charges. We have measured th e effects of varying electron density and discuss the influence of ele ctronic correlation on the conductivity.