EFFECT OF FINITE-ENERGY ACOUSTIC PHONONS ON THE ZERO-FIELD MOBILITY CHARACTERISTICS OF HIGH-PURITY SEMICONDUCTORS AT LOW LATTICE TEMPERATURES

The effect of the finite energy of the acoustic phonons on the zero-fi eld-mobility characteristics in high-purity Si and InSb at low lattice temperatures has been investigated by a numerical technique taking th e nonparabolicity of the conduction band into account and under the co ndition that neither the acoustic-phonon energy can be neglected in co mparison to the carrier energy nor the phonon distribution be represen ted by the equipartition law.