Ak. Ghorai et Dp. Bhattacharya, EFFECT OF FINITE-ENERGY ACOUSTIC PHONONS ON THE ZERO-FIELD MOBILITY CHARACTERISTICS OF HIGH-PURITY SEMICONDUCTORS AT LOW LATTICE TEMPERATURES, Physical review. B, Condensed matter, 47(20), 1993, pp. 13858-13860
The effect of the finite energy of the acoustic phonons on the zero-fi
eld-mobility characteristics in high-purity Si and InSb at low lattice
temperatures has been investigated by a numerical technique taking th
e nonparabolicity of the conduction band into account and under the co
ndition that neither the acoustic-phonon energy can be neglected in co
mparison to the carrier energy nor the phonon distribution be represen
ted by the equipartition law.