MONOLITHIC INTEGRATION OF A WAVE-GUIDE INGAAS INP PIN PHOTODIODE WITHA LOCALLY ION-IMPLANTED JFET FOR RECEIVER OEIC APPLICATIONS/

The device fabrication for a monolithic integration of a waveguide (WG ), a photodiode (PD) and a junction field-effect transistor (JFET) in the InGaAs/InP material system is described. In an optimised WG/PD lay er sequence, grown by metal organic vapour-phase epitaxy (MOVPE), JFET s have been realised using local Si and Be ion implantations. The JFET s (1.5 mum x 200 mum) have a maximum transconductance of 160 mS/mm and a cutoff frequency of 12 GHz. The PDs are vertically coupled to the I nGaAsP WG by evanescent field coupling. They show a low dark current o f 3 nA and a 3 dB bandwidth of 5 GHz at - 10 V bias. With the presente d layer structure, a transimpedance receiver OEIC with monolithically integrated WG has been realised. The receiver sensitivity is -27.3 dBm at a BER of 10(-9) for 400 Mbit/s data rate.