CARRIER CARRIER SCATTERING EFFECTS IN INGAAS-GAAS STRAINED-LAYER LASERS

The authors have calculated the gain-current characteristics of a 70 A In0.2Ga0.8As-GaAs strained layer quantum well laser assuming strict k -selection and including spectral broadening due to carrier-carrier in teractions at high carrier densities. The broadening lifetime, which i s dependent upon energy and carrier density, has been calculated from first principles using an intraband Auger-type process. The effect of both electron-electron and hole-hole scattering has been included in t he calculation of this lifetime. The paper compares the effect on the gain-current characteristics of the energy dependent lifetime and of a constant lifetime of 10(-13) s used typically in other calculations.