The implantation of 20% Ge-doped silica with MeV Si or Ge ions has bee
n used to produce singlemode channel waveguides. The germanosilicate f
ilm was grown by plasma enhanced chemical vapour deposition. For impla
ntation with either Si or Ge ions, the attenuation loss was measured a
s 0.15-0.25dB/cm at 1300nm and 1.5-1.8dB/cm at 1550nm.