CHANNEL WAVE-GUIDES FORMED BY ION-IMPLANTATION OF 20 MOL-PERCENT GE-DOPED SILICA

Authors
LEECH PW FAITH M RIDGWAY MC LEISTIKO O
Citation
Pw. Leech et al., CHANNEL WAVE-GUIDES FORMED BY ION-IMPLANTATION OF 20 MOL-PERCENT GE-DOPED SILICA, Electronics Letters, 32(11), 1996, pp. 1000-1002
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
11
Year of publication
1996
Pages
1000 - 1002
Database
ISI
SICI code
0013-5194(1996)32:11<1000:CWFBIO>2.0.ZU;2-K
Abstract
The implantation of 20% Ge-doped silica with MeV Si or Ge ions has bee n used to produce singlemode channel waveguides. The germanosilicate f ilm was grown by plasma enhanced chemical vapour deposition. For impla ntation with either Si or Ge ions, the attenuation loss was measured a s 0.15-0.25dB/cm at 1300nm and 1.5-1.8dB/cm at 1550nm.