ELECTROOPTICAL MIXING IN AN EDGE-COUPLED GAINAS INP HETEROJUNCTION PHOTOTRANSISTOR/

Authors
VANDECASTEELE J VILCOT JP GOUY JP MOLLOT F DECOSTER D
Citation
J. Vandecasteele et al., ELECTROOPTICAL MIXING IN AN EDGE-COUPLED GAINAS INP HETEROJUNCTION PHOTOTRANSISTOR/, Electronics Letters, 32(11), 1996, pp. 1030-1032
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
11
Year of publication
1996
Pages
1030 - 1032
Database
ISI
SICI code
0013-5194(1996)32:11<1030:EMIAEG>2.0.ZU;2-U
Abstract
Gain nonlinearities at low optical power of an edge coupled GaInAs/InP heterojunction bipolar phototransistor are used to mix the optical de modulation products of two (or more) laser beams. One beam could be CW or low frequency range modulated, since the other one is RF or microw ave modulated. Experiments carried out for 2GHz and 2kHz, respectively , show the mixing of the two demodulated electrical signals in the pho totransistor.