HIGH-PERFORMANCE ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS (E-HEMTS) LATTICE-MATCHED TO INP

Authors
MAHAJAN A FAY P CANEAU C ADESIDA I
Citation
A. Mahajan et al., HIGH-PERFORMANCE ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTORS (E-HEMTS) LATTICE-MATCHED TO INP, Electronics Letters, 32(11), 1996, pp. 1037-1038
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
11
Year of publication
1996
Pages
1037 - 1038
Database
ISI
SICI code
0013-5194(1996)32:11<1037:HEHT(>2.0.ZU;2-P
Abstract
The fabrication of 1.0 mu m gate length enhancement mode high electron mobility transistors (E-HEMTs) in the lattice matched LnAlAs/InGaAs/I nP material system is reported. Typical device DC chacteristics includ e a threshold voltage of 275mV, transconductance of 650mS/mm, output c onductance of 7.0mS/mm, and an off-state breakdown voltage of 16V. The devices exhibited excellent RF performance with an f(t) of 35GHz and an f(max) of 80GHz. For the first time, a process for E-HEMTs lattice matched to InP suitable for circuit applications is presented.