SUB-QUARTER-MICROMETER GAAS-MESFET PROCESS WITH WSI SIDEWALL GATE

Authors
UDA T NISHITSUJI M NISHII K FUJIMOTO K TAMURA A
Citation
T. Uda et al., SUB-QUARTER-MICROMETER GAAS-MESFET PROCESS WITH WSI SIDEWALL GATE, Electronics Letters, 32(11), 1996, pp. 1038-1039
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
11
Year of publication
1996
Pages
1038 - 1039
Database
ISI
SICI code
0013-5194(1996)32:11<1038:SGPWWS>2.0.ZU;2-A
Abstract
The authors have developed a novel sub-quarter-micrometre WSi sidewall gate GaAs MESFET (SIG-FFT) fabrication process. In this process, usin g WSi sidewalls as gate electrodes, the gate length is controlled only by the thickness of a WSi thin mm deposited by sputtering. and sub-qu arter-micrometre gales can be fabricated easily without using photolit hography. The 0.15 mu m-gate SIG-FET has exhibited f(t) = 50GHz and f( max) = 120GHz.