THERMALLY STABLE INALAS INGAAS HETEROJUNCTION FET WITH ALAS/INAS SUPERLATTICE INSERTION LAYER/

Authors
FUJIHARA A ONDA K NAKAYAMA T MIYAMOTO H ANDO Y WAKEJIMA A MIZUKI E KUZUHARA M
Citation
A. Fujihara et al., THERMALLY STABLE INALAS INGAAS HETEROJUNCTION FET WITH ALAS/INAS SUPERLATTICE INSERTION LAYER/, Electronics Letters, 32(11), 1996, pp. 1039-1041
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
32
Issue
11
Year of publication
1996
Pages
1039 - 1041
Database
ISI
SICI code
0013-5194(1996)32:11<1039:TSIIHF>2.0.ZU;2-1
Abstract
A novel InAlAs/InGaAs heterojunction FET (HJFET), with an AlAs/InAs su perlattice inserted between an InAlAs Schottky layer and an InAlAs don or layer, is proposed. The developed device exhibited initial DC chara cteristics identical to those of the conventional lattice-matched HJFE T and improved thermal stability owing to the inserted superlattice la yer acting as a barrier against impurity diffusion.