EVOLUTION OF SHALLOW DONORS WITH PROTON FLUENCE IN N-TYPE SILICON

Authors
NTSOENZOK E DESGARDIN P SAILLARD M VERNOIS J BARBOT JF
Citation
E. Ntsoenzok et al., EVOLUTION OF SHALLOW DONORS WITH PROTON FLUENCE IN N-TYPE SILICON, Journal of applied physics, 79(11), 1996, pp. 8274-8277
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
79
Issue
11
Year of publication
1996
Pages
8274 - 8277
Database
ISI
SICI code
0021-8979(1996)79:11<8274:EOSDWP>2.0.ZU;2-2
Abstract
Bipolar components that consist of p(+)n junctions have been irradiate d by MeV protons at fluences ranging from 10(11) to 10(13) particles c m(-2). Capacitance-voltage measurements have been used to investigate changes in the carrier concentration profiles. Shallow donors that can induce harmful effects in electronic devices have been studied as a f unction of fluence, flux, and annealing parameters. (C) 1996 American Institute of Physics.