SPACE-CHARGE-LIMITED CURRENTS IN AMORPHOUS-SEMICONDUCTORS WITH CORRELATED DEFECTS

Model calculations of space-charge-limited currents for a semiconducto r containing correlated defects exhibiting amphoteric electronic state s are presented. The filling of such states by charge-carrier injectio n is, as follows: (1) the states with a positive correlation energy ar e filled in two separate steps involving one electron each, (2) the st ates with a negative correlation energy are filled in a concentrated s tep involving two electrons. These features are reflected in space-cha rge-limited current characteristics and their temperature dependencies . (C) 1996 American Institute of Physics.