INTERFACE TRAPS IN JET-VAPOR-DEPOSITED SILICON NITRIDE-SILICON CAPACITORS

The properties of interface traps in metal-silicon nitride (deposited by jet vapor deposition technique) -silicon (MNS) capacitors have been studied in some detail. In comparison with those in metal-oxide-Si ca pacitors, the interface traps in our MNS capacitors exhibit the follow ing major differences: (i) similar to 2 orders of magnitude higher tim e constants; (ii) no evidence of two distinguishable defects following irradiation as revealed by the ac conductance measurement; and (iii) absence of latent generation of interface traps following irradiation. On the other hand, the interface-trap transformation process followin g irradiation is qualitatively similar in silicon nitride and thermal oxide devices. (C) 1996 American Institute of Physics.