Aa. Ahmad et al., OPTICAL-PROPERTIES OF BORON-CARBIDE (B5C) THIN-FILMS FABRICATED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 79(11), 1996, pp. 8643-8647
Variable angle of incidence spectroscopic ellipsometry was used to det
ermine the optical constants near the band edge of boron carbide (B5C)
thin films deposited on glass and n-type Si(111) via plasma-enhanced
chemical-vapor deposition. The index of refraction n, the extinction c
oefficient k, and the absorption coefficient are reported in the photo
n energy spectrum between 1.24 and 4 eV. Ellipsometry analysis of B5C
films on silicon indicates a graded material, while the optical consta
nts of B5C on glass are homogeneous. Line shape analyses of absorption
data for the films on glass indicate an indirect transition at approx
imately 0.75 eV and a direct transition at about 1.5 eV. (C) 1996 Amer
ican Institute of Physics.