OPTICAL-ABSORPTION IN ALLOYS OF SI, GE, C, AND SN

Group IV semiconductor alloy systems offer promise as variable band ga p alloys compatible with Si technology. Binary, ternary, and quaternar y group IV alloys were grown by molecular beam epitaxy on Si substrate s. The fundamental absorption edge was measured by Fourier transform i nfrared spectroscopy to obtain the optical band gap of the alloys, and the position of the fundamental absorption edge was observed to depen d on the experimentally measured alloy composition. Our results indica te a variety of Si-rich group IV alloys with various band gaps are exp erimentally producible. (C) 1996 American Institute of Physics.