G. Ghislotti et al., EFFECT OF DIFFERENT PREPARATION CONDITIONS ON LIGHT-EMISSION FROM SILICON IMPLANTED SIO2 LAYERS, Journal of applied physics, 79(11), 1996, pp. 8660-8663
Visible light emission from Si+-implanted SiO2 layers as a function of
different annealing conditions (temperature, time and ambient) is stu
died. It is shown that a 560 nm band, present in as implanted samples,
increases its intensity for increasing annealing temperatures and is
still observed after annealing at 1000 degrees C. The emission time is
fast (0.5-2 ns). A second band centered at 780 nm is detected after a
nnealing at 1000 degrees C. The intensity of the 780 nm band further i
ncreases when hydrogen annealing was performed. The emission time is l
ong (1 mu s-0.3 ms). Based on the annealing behavior and on the emissi
on times, the origin of the two bands is discussed. (C) 1996 American
Institute of Physics.