T. Becherer et al., NORMAL ELECTRON-TUNNELING IN RAMP-TYPE YBA2CU3O7 PRBA2CU3O7/YBA2CU3O7JUNCTIONS PREPARED BY LASER-ABLATION/, Physical review. B, Condensed matter, 47(21), 1993, pp. 14650-14653
Ramp-type YBa2Cu3O7/PrBa2Cu3O7/YBa2Cu3O7 tunneling junctions have been
prepared by laser ablation. The voltage dependence of the differentia
l conductance is measured at different temperatures and magnetic field
s. The junctions are thermally stable and can be cooled down to liquid
-helium temperature and warmed up again to room temperature several ti
mes without quality loss. At temperatures below 35 K they show clear i
ndications of an energy gap and in the same temperature range a very s
harp zero-bias anomaly.