HIGH-SPIN STRETCHED STATES EXCITED IN (N,P) REACTIONS AT 300 MEV

Differential cross sections were measured and compared to distorted-wa ve impulse-approximation calculations for the J(pi) = 4-(vd5/2,pip3/2( -1)) state excited in the C-12(n,p)B-12 (4.52 MeV) reaction, the J(pi) = 6-(v,f7/2pid5/2(-1)) state excited in the Si-28(n,p)Al-28 (5.175 Me V) reaction, and the J(pi) = 10-(vh11/2,pig9/2(-1)) state excited in t he Sn-120(n,p)In-120 (congruent-to 0.0 MeV) reaction at 300 MeV. We ob tained a normalization factor of 0.68 for the J(pi) = 10-(vh11/2,pig9/ 2(-1)) state excited in Sn-120(n,p)In-120 (congruent-to 0.0 MeV) react ion; this is the first ''1homegaBAR'' stretched state known in this ma ss region.