ION-IMPLANTATION INTO FULLERENE

Various elements - H, Li, B, Ar, Kr, Xe, Cs, Pb and Bi - have been imp lanted at 20 - 200 keV and at room temperature up to different fluence s into thin fullerene layers evaporated onto polished Si substrates. S ubsequently their depth profiles were determined by NRA, NDP, or RES a nalysis. These measurements were compared with ion implantation into a morphous carbon and with theory. In most cases the degree of fullerene destruction was monitored by Raman spectroscopy earlier. The-results show that there exists a general trend insofar as theory appears to un derestimate both ranges and range stragglings for heavy projectile ion s, whereas for light and medium-heavy ions experimental range results agree with theory with Fn some +/-30%. In a few cases range straggling s are found to be considerably larger than predicted by theory, which may be attributed to post-implantational radiation enhanced diffusion. There is only little influence of the degree of fullerene destruction onto the implantation profile parameters. Ranges in amorphous carbon appear to be in general a little bit larger than those ones in fullere ne.