LOW-TEMPERATURE FABRICATION OF HIGH DIELECTRIC-CONSTANT THIN-FILM CAPACITOR ON GAAS-MMIC

It succeeded in the development in highly efficient capacitor for micr owave monolithic integrated circuit (MMIC) by forming high dielectric constant materials of the SrTiO3 system at low temperature deposition using the reactive sputtering method. In the past, the integration by making monolithic about this material was difficult because the fabric ation temperature was high (about 450 degrees C). Therefore, to realiz e it, the low temperature process and the high precision process which fitted in with the mass production were necessary. In this study, it developed sputtering technology which it is possible to deposit at the low temperature of about 200 degrees C in SrTiO3 which shows the diel ectric characteristic to be excellent to frequency 3 GHz over.