GROWTH OF AN EPITAXIAL BI4TI3O12 CEO2/MGO HETEROSTRUCTURE FOR WAVE-GUIDE APPLICATIONS/

Citation
Tw. Noh et al., GROWTH OF AN EPITAXIAL BI4TI3O12 CEO2/MGO HETEROSTRUCTURE FOR WAVE-GUIDE APPLICATIONS/, Journal of the Korean Physical Society, 29, 1996, pp. 594-597
Citations number
8
Categorie Soggetti
Physics
ISSN journal
03744884
Volume
29
Year of publication
1996
Supplement
S
Pages
594 - 597
Database
ISI
SICI code
0374-4884(1996)29:<594:GOAEBC>2.0.ZU;2-P
Abstract
Using pulsed laser deposition, a Bi4Ti3O12 thin film and Bi4Ti3O12/CeO 2 heterostructures were grown on MgO(001) substrates. Structural prope rties of the film and the heterostructures were investigated using x-r ay diffraction techniques. The heterosturctures were found to be more useful for making an optical single-mode waveguide, since it allows la rger cut-off dimensions. By controlling the deposition temperature of the CeO2 interlayer, an epitaxial heterostructure could be grown. From the epitaxial Bi4Ti3O12/CeO2/MgO heterostructure, a ridge waveguide w as fabricated by photolithographic and ion-milling techniques. A singl e-mode near-field pattern was observed using an end-fire coupling meth od.