(BA,SR)TIO3 CAPACITOR TECHNOLOGY FOR GBIT-SCALE DRAMS

Authors
MIKAMI N KAWAHARA T HORIKAWA T YAMAMUKA M MAKITA T KUROIWA T YUUKI A SHIBANO T OOMORI T ONO K SATOH S ABE H
Citation
N. Mikami et al., (BA,SR)TIO3 CAPACITOR TECHNOLOGY FOR GBIT-SCALE DRAMS, Journal of the Korean Physical Society, 29, 1996, pp. 598-602
Citations number
9
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
29
Year of publication
1996
Supplement
S
Pages
598 - 602
Database
ISI
SICI code
0374-4884(1996)29:<598:(CTFGD>2.0.ZU;2-7
Abstract
DRAM application of(Ba,Sr)TiO3 (BST) films is investigated. Because of low dielectric constant of BST films due to the size effect, Gbit sca le DRAM capacitor should be a thick film stacked structure. Using a co nformal CVD process, we obtained a cell capacitance greater than 25 fF in a 1Gbit DRAM capacitor with a 200-nm high Ru storage node. The pro perty which mainly controls the refreshing operation of the DRAM is no t the DC leakage current but rather the dissipation of the electric ch arge from the dielectric after-effect.