SEGREGATION AND DIFFUSION ON SEMICONDUCTOR SURFACES

Authors
NUTZEL JF ABSTREITER G
Citation
Jf. Nutzel et G. Abstreiter, SEGREGATION AND DIFFUSION ON SEMICONDUCTOR SURFACES, Physical review. B, Condensed matter, 53(20), 1996, pp. 13551-13558
Citations number
39
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
53
Issue
20
Year of publication
1996
Pages
13551 - 13558
Database
ISI
SICI code
0163-1829(1996)53:20<13551:SADOSS>2.0.ZU;2-8
Abstract
The surface segregation of phosphorus, antimony, and boron in Si molec ular-beam epitaxy is investigated experimentally at low temperatures. Rate and temperature dependent measurements are explained by a segrega tion model, which connects surface segregation with surface diffusion. The model is found to explain quantitatively many available data of s egregation on different semiconductor surfaces, explicitly: Si, Ge, an d GaAs.