RESONANT MAGNETOTUNNELING SPECTROSCOPY OF P-TYPE-WELL INTERBAND TUNNELING DIODES

We report experimental results of quantum transport through InAs/AlSb/ GaSb/AlSb/InAs heterostructures having well widths of 7.0, 8.0, and 11 .9 nm, respectively, in magnetic fields of up to 8.0 T aligned paralle l to the epitaxial growth planes. Application of this resonant magneto tunneling spectroscopy technique allows the well subband dispersions t o be probed along the wave vector perpendicular to both the growth dir ection and the applied magnetic field. In all three samples we observe little change in the current-voltage characteristics below a sample-d ependent critical magnetic field B-crit. Above this critical field, bo th the main I-V peak and a subsequent shoulder that forms at high fiel ds shift in bias in a manner we attribute to be related to the HH2 and LH1 subbands (where HH and LH denote heavy and light holes), respecti vely.