Sl. Chang et al., INITIAL-STAGES OF METAL ENCAPSULATION DURING EPITAXIAL-GROWTH STUDIEDBY STM - RH AG(100)/, Physical review. B, Condensed matter, 53(20), 1996, pp. 13747-13752
We present results of a scanning tunneling microscope (STM) study of R
h/Ag(100) epitaxy, which shows how the surface rearranges toward the m
ore stable encapsulated structure known to form at higher temperatures
. At room temperature, Rh growth proceeds via two competing pathways:
(i) thermally activated exchange with Ag surface atoms, which leads to
increased coordination of the higher surface free-energy metal Rh by
Ag atoms, and (ii) nucleation and growth of mixed Rh/Ag adislands. The
Ag-Rh interaction also reduces the surface mobility of Ag, e.g., by l
ocal pinning of step edges, accompanied by complex step and surface er
osion processes.