INITIAL-STAGES OF METAL ENCAPSULATION DURING EPITAXIAL-GROWTH STUDIEDBY STM - RH AG(100)/

Citation
Sl. Chang et al., INITIAL-STAGES OF METAL ENCAPSULATION DURING EPITAXIAL-GROWTH STUDIEDBY STM - RH AG(100)/, Physical review. B, Condensed matter, 53(20), 1996, pp. 13747-13752
Citations number
26
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
53
Issue
20
Year of publication
1996
Pages
13747 - 13752
Database
ISI
SICI code
0163-1829(1996)53:20<13747:IOMEDE>2.0.ZU;2-C
Abstract
We present results of a scanning tunneling microscope (STM) study of R h/Ag(100) epitaxy, which shows how the surface rearranges toward the m ore stable encapsulated structure known to form at higher temperatures . At room temperature, Rh growth proceeds via two competing pathways: (i) thermally activated exchange with Ag surface atoms, which leads to increased coordination of the higher surface free-energy metal Rh by Ag atoms, and (ii) nucleation and growth of mixed Rh/Ag adislands. The Ag-Rh interaction also reduces the surface mobility of Ag, e.g., by l ocal pinning of step edges, accompanied by complex step and surface er osion processes.