CURRENT OSCILLATIONS INDUCED BY RECOMBINATION INSTABILITY IN SEMICONDUCTORS

We present a one-dimensional system of gold-doped n-Ge in which the re combination instability leads the system to instability and current os cillations. Using the finite difference method, spatio-temporal evolut ion of the high-field domain is computed with the bias voltage, the re combination coefficient, and the emission coefficient being taken as t he control parameters. Three types of modes of operation: the Ohmic, t he quenched and the transit-time modes are found. Non-periodic oscilla tions are also found in the transition region between the quenched and the transit-time modes. Their origins are clarified on the basis of s patio-temporal evolution of the high-field domain.