GROWTH OF FERROELECTRIC LINBO3 THIN-FILM ON MGO-BUFFERED SI BY THE SOL-GEL METHOD

Structural properties of ferroelectric LiNbO3 thin films deposited on MgO-buffered Si by the sol-gel process has been investigated. X-ray di ffraction and Rutherford backscattering spectrometry (RES) showed that (111) oriented MgO film were grown with the formation of an intermedi ate amorphous SiO2 layer between Si and MgO. Highly textured ferroelec tric LiNbO3 thin films with the preferred c-axis orientation could be grown on (100) Si with MgO buffer layer, which were strongly influence d by the thickness of the MgO layer. RES analysis of the LiNbO3 film s hows an evidence of MgO diffusion into the LiNbO3 film. Dependence of the LiNbO3 film's quality on the thickness of MgO buffer layer seems t o be related to the diffusion of MgO.