Rg. Mustafin et al., SPIN-LATTICE RELAXATION AND KNIGHT-SHIFT ON PROTONS IN THE HYDROGEN-DOPED SUPERCONDUCTING SYSTEM H0.2LA1.8SR0.2CUO4, JETP letters, 63(7), 1996, pp. 560-565
Measurements of the spin-lattice relaxation rate and Knight shift on p
rotons in hydrogen-doped superconducting H0.2La1.8Sr0.2CuO4 samples ar
e performed in the temperature range 4.2-300 K. An anomalous behavior
of the spin-lattice relaxation rate is observed at low temperatures T
similar to 20 K. A model is constructed that explains the appearance o
f carrier-depleted regions in the bulk of the semiconductor on the bas
is of the formation of a charged defect (proton). (C) 1996 American In
stitute of Physics.