PREPARATION AND FERROELECTRICITY OF SR-MODIFIED LEAD-ZIRCONATE-TITANATE THIN-FILMS PREPARED BY THE SOL-GEL METHOD

Ferroelectric (Pb0.9Sr0.1)(Zr0.52Ti0.48)O-3 (PSZT) thin films were dep osited on platinum coated Si substrates by the sol-gel method. X-ray d iffraction showed that PSZT thin films were polycrystalline and the pe rovskite structure only appeared in films annealed above 650 degrees C . The surface morphology of PSZT thin films was observed by an atomic force microscope. In order to characterize the ferroelectricity of PSZ T thin films, a metal-ferroelectric-metal capacitor was produced by de positing the gold films as the top electrode and ferroelectric propert ies were observed by measuring the ferroelectric hysteresis (D-E) loop s and the capacitance versus voltage (C-V) characteristics. The dielec tric constant was about 1017 and the dissipation factor was about 0.03 . At the saturation electric field of 200 kV/cm, the maximum and reman ent polarizations, and coercive field were 38 mu C/cm(2), 18 mu C/cm(2 ) and 52 kV/cm. The charge storage density at 200 kV/cm was about 20 m u C/cm(2).