A 2X2 ANALOG MEMORY IMPLEMENTED WITH A SPECIAL LAYOUT INJECTOR

Using floating gate MOSFET's, we have designed a 2 x 2 analog memory, which is expandable to any size array. The reduced programming voltage due to the innovative floating gate MOSFET's enables us to construct the analog memory with a standard double poly n-well process. In addit ion, a novel programming algorithm is presented, This method will cont ribute not only to a reduced total programming time, but also to a pro longed lifetime of the memory. The high voltage program/erase poises a re arranged to minimize the disturbance of nonselected cells. The reso lution of a memory cell has been found to be 10 mV over a range of 1.2 5 V to 2 V which is equivalent to the information content of 6 digital cells.