GROWTH-STUDIES OF THIN-FILM DIAMOND USING MOLECULAR-BEAM TECHNIQUES

The heterogrowth of diamond on Si(100) using individual atomic H and m ethyl molecular beams under high vacuum conditions has been investigat ed using in situ X-ray photoelectron and associated electron energy lo ss spectroscopies, along with Raman spectroscopy and secondary electro n microscopy. Reaction of the methyl molecular beam along with the hea ted Si surface is shown to provide an efficient route for the formatio n of SiC and graphitic carbon phases, which are etched away only slowl y using the atomic H beam. Atomic hydrogen inhibits the formation of t hese phases when both beams simultaneously interact with the heated su rface. Diamond films can nonetheless be deposited provided the methyl: hydrogen flux ratios are not too low and some of the characteristics o f this molecular beam approach to thin film diamond are discussed.