ROLE OF SURFACE-DIFFUSION PROCESSES DURING BIAS-ENHANCED NUCLEATION OF DIAMOND ON SI

We show that the ion flux of energetic ions is the critical factor for the bias enhancement of the nucleation density of diamond on silicon. The energetic ions penetrate the surface, show little migration and f orm nanocrystalline graphite. The radicals have low energies and are a dsorbed and migrate over the surface. This is confirmed by the shape o f the C hillocks formed during biasing. Diamond nucleation is believed to occur either as small diamond crystals, which have grown during bi asing, or on graphitic planes, which are oriented locally perpendicula r to the surface.