INVESTIGATIONS OF THE INCORPORATION OF B, P AND N INTO CVD-DIAMOND FILMS BY SECONDARY-ION MASS-SPECTROMETRY

B-, P- and N-doped polycrystalline diamond films have been produced us ing the hot-filament CVD method by the addition of triethylborane, pho sphine and molecular nitrogen. The doping level - not aimed at semicon ducting applications but to investigate the influence of the addition on diamond crystal growth and the formation of new phases containing t he doping elements - was investigated by depth-profiling secondary-ion mass spectrometry (SIMS). The dopant concentrations, which seemed tp be linearly related to the dopant gas concentrations, were quantified using ion-implantation standards and compared to nuclear reaction anal ysis (NRA) results. In the investigated doping region, boron (0.4-2.8 at.%) is enriched during the deposition by a factor of six to nine, ph osphorus (10-600 ppma) (ppm atomic) shows a doping efficiency below on e, and nitrogen is incorporated below about 100 ppma.