DEPOSITION OF METAL-CONTAINING DIAMOND-LIKE CARBON-FILMS FROM METAL-ORGANIC PRECURSORS USING A PLASMA ACTIVATED RF PROCESS

Plasma activated chemical vapour deposition from ferrocene as metalorg anic precursor was used to prepare Fe-C:H-films for different substrat e temperatures. The films were analyzed with X-ray induced photoelectr on spectroscopy. From the temperature dependent step-like change of th e film-composition with r.f. power, we postulate two different deposit ion mechanisms. For low r.f. power, the films grow by direct incorpora tion of larger fragmentations, while for higher r.f. power the deposit ion mechanism includes a deposition via an adsorption-layer of CH3-rad icals. By analyzing the Fe2p-states, we determined the reactivity of t he iron-bonds in the films. Conclusions are drawn about the fragmentat ion and the impinging ions on the film surface.