TEMPERATURE-DEPENDENCE OF THE FORMATION OF HIGHLY TETRAHEDRAL A-C-H

Citation
S. Sattel et al., TEMPERATURE-DEPENDENCE OF THE FORMATION OF HIGHLY TETRAHEDRAL A-C-H, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 425-428
Citations number
21
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
5
Issue
3-5
Year of publication
1996
Pages
425 - 428
Database
ISI
SICI code
0925-9635(1996)5:3-5<425:TOTFOH>2.0.ZU;2-F
Abstract
Deposition from a low pressure plasma beam source creates a highly tet rahedral form of hydrogenated amorphous carbon (ta-C:H) which is analo gous to the ta-C formed by deposition from a filtered cathodic are or mass-selected ion beam. The properties of ta-C:H have been studied as a function of the substrate deposition temperature T-s and ion energy using electron energy loss spectroscopy, X-ray diffraction and atomic force microscopy. The density decreases suddenly for deposition temper atures above a threshold value, which is found to decrease with increa sing ion energy. The films above the threshold are mainly sp(2) bonded , with graphitic layering and high roughness. The variation of the fil m density with the ion energy and T-s is consistent with deposition oc curring by subplantation.