NANOCRYSTALLINE C=N THIN-FILMS

Citation
J. Szmidt et al., NANOCRYSTALLINE C=N THIN-FILMS, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 564-569
Citations number
13
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
5
Issue
3-5
Year of publication
1996
Pages
564 - 569
Database
ISI
SICI code
0925-9635(1996)5:3-5<564:NCT>2.0.ZU;2-7
Abstract
This paper discusses phase composition as well as electrical and optic al properties of carbon-nitrogen (CN) compound obtained by reactive pu lse plasma method. It is shown that material produced in such a way is a mixture of an amorphous compound which we have called polycyanoimin e and nanocrystalline diamond. Its electrical and optical properties d iffer from those of DLC obtained by the same method. During electrical measurements there have not been observed diode-like current-voltage (I-V) characteristics, what rules out the possibility that nitrogen at oms might act as a dopant in obtained material. It has been found that electrical resistivity of investigated films, as ranging from 10(9) t o 10(11) Omega cm, has been higher than that of DLC layers produced fr om pulse plasma. However, subsequent low temperature (350 degrees C) a nnealing has resulted in the drop of their resistivity to the value of 10(6)-10(7) Omega cm, the same as for DLC materials. Annealing has al so influenced refractive index of investigated layers resulting in its increase from 1.9 to 2.13. Moreover, it has been observed that CN lay ers produced under the highest nitrogen pressure (i.e. 60 Pa) have bee n luminescent when illuminated with 514.5 nm laser beam, which does no t occur in the case of DLC.