FANO-TYPE FEATURES IN MAGNETOABSORPTION IN SEMICONDUCTORS

It is shown that bulk semiconductors exhibit strongly asymmetric Fano- type resonance profiles in magnetoabsorption processes involving the f ormation of hot electron-hole pairs (EHPs) and accompanied by the scat tering of the EHPs by defects. This result is valid for transitions to electronic states with large Landau quantum numbers, when the Coulomb interaction plays a small role. The physical reason for such a sharp change in the magnetoabsorption coefficient as compared with the expec ted result for the ordinary density of states in a quantizing magnetic field is that the electronic excitations are quasi-one-dimensional. T he form of the resonance absorption is in good qualitative agreement w ith the experimental data. (C) 1996 American Institute of Physics.