APPROACH FOR DEVELOPING A LARGE-SIGNAL MODEL OF A 150-GHZ HEMT

Authors
DISKUS CG BERGAMASCHI C SCHEFER M PATRICK W KLEPSER BUH BACHTOLD W
Citation
Cg. Diskus et al., APPROACH FOR DEVELOPING A LARGE-SIGNAL MODEL OF A 150-GHZ HEMT, International journal of microwave and millimeter-wave computer-aided engineering, 6(4), 1996, pp. 234-242
Citations number
32
Categorie Soggetti
Computer Application, Chemistry & Engineering","Engineering, Eletrical & Electronic","Computer Science Interdisciplinary Applications
Journal title
International journal of microwave and millimeter-wave computer-aided engineering → ACNP
ISSN journal
10501827
Volume
6
Issue
4
Year of publication
1996
Pages
234 - 242
Database
ISI
SICI code
1050-1827(1996)6:4<234:AFDALM>2.0.ZU;2-5
Abstract
In this study, the development of a large-signal model describing the electrical behavior of an InAlAs/InGaAs/InP-HEMT will he discussed, Th e transistors under question were fabricated at our laboratory, They r evealed a transit frequency of 150 GHz, which is, to our knowledge, th e best result obtained with a T-gate of 0.25-mu m footprint, The aim o f this project was to develop a model of this transistor for simulatin g nonlinear circuits with commercial simulator software like HP-MDS or SPICE, The procedure outlined results in an easily applicable model w hich produces very good fits to the measured S-parameters. (C) 1996 Jo hn Wiley & Sons, Inc.