LARGE-SIGNAL DESIGN METHOD OF DISTRIBUTED POWER-AMPLIFIERS APPLIED TOA 2-18-GHZ GAAS CHIP EXHIBITING HIGH-POWER DENSITY PERFORMANCES

Authors
CAMPOVECCHIO M LEBRAS B HILAL R LAJUGIE M OBREGON J
Citation
M. Campovecchio et al., LARGE-SIGNAL DESIGN METHOD OF DISTRIBUTED POWER-AMPLIFIERS APPLIED TOA 2-18-GHZ GAAS CHIP EXHIBITING HIGH-POWER DENSITY PERFORMANCES, International journal of microwave and millimeter-wave computer-aided engineering, 6(4), 1996, pp. 259-269
Citations number
12
Categorie Soggetti
Computer Application, Chemistry & Engineering","Engineering, Eletrical & Electronic","Computer Science Interdisciplinary Applications
Journal title
International journal of microwave and millimeter-wave computer-aided engineering → ACNP
ISSN journal
10501827
Volume
6
Issue
4
Year of publication
1996
Pages
259 - 269
Database
ISI
SICI code
1050-1827(1996)6:4<259:LDMODP>2.0.ZU;2-B
Abstract
A suitable large signal design method of distributed power amplifiers, based on the optimum FET load requirement for high power operation, i s proposed in this article, The gate and drain line characteristic adm ittances are determined, providing both the initial values and right d irections for an optimum design, To validate the proposed design metho d, a FET amplifier demonstrator with a gate periphery of 1.2 mm has be en manufactured at the Texas Instruments foundry, The MMIC distributed amplifier demonstrated an improved power density performance of 340 m W/mm over the 2-18-GHz frequency band associated with a minimum of 13% power-added efficiency and 24% drain efficiency at 1-dB compression i n CW operation. (C) 1996 John Wiley & Sons, Inc.