Ej. Lee et al., LIGHT-INDUCED REACTIONS OF POROUS AND SINGLE-CRYSTAL SI SURFACES WITHCARBOXYLIC-ACIDS, Journal of the American Chemical Society, 118(23), 1996, pp. 5375-5382
Light-induced reactions of Si surfaces with carboxylic acids to genera
te Si ester-modified surfaces are studied. The reaction proceeds by ph
otoelectrochemical oxidation of porous or (100)-oriented single-crysta
l n-type Si in formic, acetic, or trifluoroacetic acid electrolyte sol
utions, The reaction products at the porous Si surface are identified
by Fourier-transform infrared (FTIR) spectroscopy, Derivatization with
esters reduces the photoluminescence intensity of porous Si. X-ray ph
otoelectron spectroscopy (XPS) of derivatized single-crystal Si is use
d to confirm the compositional and bonding information and to demonstr
ate that the same chemistry occurs at a single-crystal Si surface. A m
echanism is proposed in which illumination of reverse-biased Si remove
s electron density from the Si surface, rendering Si-Si bonds suscepti
ble to nucleophilic attack by carboxylic acid. The reaction has a mark
ed dependence on light intensity and the Si surface can be photopatter
ned by illumination through a mask during derivatization, Ester-patter
ned porous Si reacts with CH3(CH2)(7)(CH3)(2)SiOCH3, generating an org
anosilane-patterned Si surface.