SINGLE-PHOTON DETECTION BEYOND 1 MU-M - PERFORMANCE OF COMMERCIALLY AVAILABLE INGAAS INP DETECTORS/

Citation
A. Lacaita et al., SINGLE-PHOTON DETECTION BEYOND 1 MU-M - PERFORMANCE OF COMMERCIALLY AVAILABLE INGAAS INP DETECTORS/, Applied optics, 35(16), 1996, pp. 2986-2996
Citations number
11
Categorie Soggetti
Optics
Journal title
ISSN journal
00036935
Volume
35
Issue
16
Year of publication
1996
Pages
2986 - 2996
Database
ISI
SICI code
0003-6935(1996)35:16<2986:SDB1M->2.0.ZU;2-2
Abstract
Commercially available InGaAs/InP avalanche photodiodes, designed for optical receivers and range finders, can be operated biased above the breakdown voltage, achieving single-photon sensitivity. We describe in detail how to select the device for photon-counting applications amon g commercial samples. Because of the high dark-counting rate the detec tor must be cooled to below 100 K and operated in a gated mode. We ach ieved a noise equivalent power of 3 x 10(-16) W Hz(1/2) to a 1.55-mu m wavelength and a time resolution well below 1 ns with a best value of 200-ps FWHM. Finally we compare these figures with the performance of state-of-the-art detectors in the near IR, and we highlight the poten tials of properly designed InGaAs/InP avalanche photodiodes in single- photon detection. (C) 1996 Optical Society of America