A. Lacaita et al., SINGLE-PHOTON DETECTION BEYOND 1 MU-M - PERFORMANCE OF COMMERCIALLY AVAILABLE INGAAS INP DETECTORS/, Applied optics, 35(16), 1996, pp. 2986-2996
Commercially available InGaAs/InP avalanche photodiodes, designed for
optical receivers and range finders, can be operated biased above the
breakdown voltage, achieving single-photon sensitivity. We describe in
detail how to select the device for photon-counting applications amon
g commercial samples. Because of the high dark-counting rate the detec
tor must be cooled to below 100 K and operated in a gated mode. We ach
ieved a noise equivalent power of 3 x 10(-16) W Hz(1/2) to a 1.55-mu m
wavelength and a time resolution well below 1 ns with a best value of
200-ps FWHM. Finally we compare these figures with the performance of
state-of-the-art detectors in the near IR, and we highlight the poten
tials of properly designed InGaAs/InP avalanche photodiodes in single-
photon detection. (C) 1996 Optical Society of America