DYNAMICS OF THE HYDROGEN OXIDATION AND SILICON DISSOLUTION REACTIONS IN THE FORMATION OF POROUS SILICON

Porous silicon layers were grown in hydrofluoric acid solutions wader constant anodic currents periodically interrupted during 100 ms every second. By monitoring the time dependent electrode potential, dynamic characteristics of the porous silicon formation were determined. Two r eactions occur during the process: at the bottom of the pores the anod ic silicon dissolution reaction proceeds and on the walls of the pores the hydrogen oxidation reaction takes place.