ELECTRICAL AND OPTICAL-PROPERTIES OF ZNO-DOPED CDO-SNO2 FILMS PREPARED BY RF-SPUTTERING

In order to improve the electrical and optical properties of CdO-SnO2 films. ZnO-doped CdO-SnO2 films are deposited by r.f. magnetron sputte ring from a sintered oxide target with various substrate temperatures. Amorphous films are grown at substrate temperatures from 323 to 573 K . Above 673 K, as-deposited films show the crystalline structure of a spinel-type compound, (Zn, Cd, Sn)2SnO4. The electrical resistivity rh o of a film sputtered from target 10-3 or 20-10 at room temperature ha s the lowest electrical resistivity about 3 x 10(-3) OMEGA cm. All as- deposited films show transitivity higher than 80% in the visible range . The low side absorption edge is decreased with increase of ZnO conte nt.