HYDROGEN PASSIVATION OF GAMMA-INDUCED RADIATION DEFECTS IN N-TYPE SI EPILAYERS

The free electron concentration and mobility behaviour under gamma-irr adiation in phosphorus-doped n-type Si epilayers, exposed to hydrogen plasma were studied by C-V, Hall effect, and conductivity measurements . It is shown that preliminary treatment of n-Si in hydrogen plasma le ads to a significant increase of its radiation hardening and decreases the annealing temperature of gamma-induced radiation defects. It is a ssumed that passivation of deep radiation defects in hydrogenated n-Si occurs due to gamma-induced atomic hydrogen generation from its inact ive bonding species, but not dopant-H complexes. The post-irradiation hydrogenation of n-Si at 100 and 160-degrees-C leads to partial recove ry of free electron concentration and mobility due to predominant pass ivation of deep radiation defects.