NUCLEATION OF A COMPLEX OXIDE DURING EPITAXIAL FILM GROWTH - SMBA2CU3OY ON SRTIO3

Citation
Vc. Matijasevic et al., NUCLEATION OF A COMPLEX OXIDE DURING EPITAXIAL FILM GROWTH - SMBA2CU3OY ON SRTIO3, Physical review letters, 76(25), 1996, pp. 4765-4768
Citations number
19
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
76
Issue
25
Year of publication
1996
Pages
4765 - 4768
Database
ISI
SICI code
0031-9007(1996)76:25<4765:NOACOD>2.0.ZU;2-B
Abstract
Film growth of a complex oxide is investigated during nucleation on a substrate surface. Using atomic force microscopy we have imaged subuni t cell coverage of SmBa2Cu3O7 deposited by reactive molecular beam epi taxy on a (100) SrTiO3 substrate. After a threshold deposition, c-axis islands are observed to nucleate predominantly along the surface step s. The heights of the nucleation islands are examined and a consistent layer stacking model is proposed. Cation stoichiometry of the nucleat ion islands is inferred to be dependent on the substrate surface and d ifferent from the bulk.