SPIN GRATINGS AND THE MEASUREMENT OF ELECTRON-DRIFT MOBILITY IN MULTIPLE-QUANTUM-WELL SEMICONDUCTORS

Authors
CAMERON AR RIBLET P MILLER A
Citation
Ar. Cameron et al., SPIN GRATINGS AND THE MEASUREMENT OF ELECTRON-DRIFT MOBILITY IN MULTIPLE-QUANTUM-WELL SEMICONDUCTORS, Physical review letters, 76(25), 1996, pp. 4793-4796
Citations number
19
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
76
Issue
25
Year of publication
1996
Pages
4793 - 4796
Database
ISI
SICI code
0031-9007(1996)76:25<4793:SGATMO>2.0.ZU;2-F
Abstract
A direct optical measurement of electron drift mobility in multiple qu antum well semiconductors is achieved by creating electron spin gratin gs in time-resolved degenerate four-wave mixing measurements. Grating decay rates are measured for spin and concentration gratings in a GaAs /AlGaAs sample at room temperature, giving an in-well electron diffusi on coefficient D-e = 127 cm(2)/s compared with an ambipolar coefficien t D-a = 13.3 cm(2)/s.