PROTRUSION FORMATION AT THE EDGES OF ION-IMPLANTED REGIONS

Authors
ROTONDARO ALP BENDER H HEYNS MM CLAEYS C
Citation
Alp. Rotondaro et al., PROTRUSION FORMATION AT THE EDGES OF ION-IMPLANTED REGIONS, Journal of the Electrochemical Society, 143(6), 1996, pp. 118-120
Citations number
3
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
143
Issue
6
Year of publication
1996
Pages
118 - 120
Database
ISI
SICI code
0013-4651(1996)143:6<118:PFATEO>2.0.ZU;2-W
Abstract
The use of high dose ion implantation on defined regions causes the fo rmation of protrusions on the wafer surface. Although this has negligi ble impact on device performance, the effect prevents analysis of the photoresist removal efficiency by sensitive light-scattering.