A SYSTEMATIC-APPROACH TO SIMULATING RAPID THERMAL-PROCESSING SYSTEMS

Citation
Tp. Merchant et al., A SYSTEMATIC-APPROACH TO SIMULATING RAPID THERMAL-PROCESSING SYSTEMS, Journal of the Electrochemical Society, 143(6), 1996, pp. 2035-2043
Citations number
29
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
143
Issue
6
Year of publication
1996
Pages
2035 - 2043
Database
ISI
SICI code
0013-4651(1996)143:6<2035:ASTSRT>2.0.ZU;2-V
Abstract
We present a systematic approach to the modeling of rapid thermal proc essing systems. In this approach, a discretized version of a computer- aided design file of a rapid thermal processing system is incorporated into fundamental physically based models of the transport phenomena t o aid in design and optimization of these reactors. These models inclu de a detailed radiative-heat-transfer description which is used to com pute radiative exchange factors involving both diffuse and specular su rfaces. The radiative exchange factors are then incorporated into tran sient finite element fluid-flow and heat-transfer models to investigat e effects of conductive and convective heat transfer on wafer temperat ure uniformity. This approach is illustrated in investigations of the effects of thermal guard rings and radiative properties of the chamber on wafer temperature uniformity. Comparisons are made with experiment s, and reduced-complexity models are evaluated to identify their range of applicability.