ATOMIC LAYER EPITAXIAL PREDEPOSITION FOR GAAS GROWTH ON SI

We report a two-step growth process, using an atomic layer epitaxially grown GaAs predeposition layer for the growth of GaAs/Si layers by me talorganic vapor phase epitaxy technique. a Photoluminescence and deep -level transient spectroscopy techniques are used to show that the qua lity of the grown material is comparable to that sown by a much compli cated procedure involving strained layer superlattice buffers introduc ed between the active GaAs layer and the Si substrate. (C) 1996 Americ an Institute of Physics.