Electrical and structural properties of platinum monosilicide (PtSi) i
n deep submicron lines are reported. The sheet resistance of the silic
ide films was found to be rather independent of the Linewidth down to
dimensions as small as 0.15 mu m. Plan-view and cross-sectional transm
ission electron microscopy was performed to study the structural prope
rties of three films, including their gain structures and lateral grow
th. The insensitive nature of the electrical properties of the silicid
e films to the linewidths is correlated with their structural properti
es. (C) 1996 American Institute of Physics.