ELECTRICAL AND STRUCTURAL-PROPERTIES OF PTSI FILMS IN DEEP-SUBMICRON LINES

Citation
Dx. Xu et al., ELECTRICAL AND STRUCTURAL-PROPERTIES OF PTSI FILMS IN DEEP-SUBMICRON LINES, Applied physics letters, 68(25), 1996, pp. 3588-3590
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
68
Issue
25
Year of publication
1996
Pages
3588 - 3590
Database
ISI
SICI code
0003-6951(1996)68:25<3588:EASOPF>2.0.ZU;2-N
Abstract
Electrical and structural properties of platinum monosilicide (PtSi) i n deep submicron lines are reported. The sheet resistance of the silic ide films was found to be rather independent of the Linewidth down to dimensions as small as 0.15 mu m. Plan-view and cross-sectional transm ission electron microscopy was performed to study the structural prope rties of three films, including their gain structures and lateral grow th. The insensitive nature of the electrical properties of the silicid e films to the linewidths is correlated with their structural properti es. (C) 1996 American Institute of Physics.